Semiconductor memory asynchronous pipeline

ABSTRACT

An asynchronously pipelined SDRAM has separate pipeline stages that are controlled by asynchronous signals. Rather than using a clock signal to synchronize data at each stage, an asynchronous signal is used to latch data at every stage. The asynchronous control signals are generated within the chip and are optimized to the different latency stages. Longer latency stages require larger delays elements, while shorter latency states require shorter delay elements. The data is synchronized to the clock at the end of the read data path before being read out of the chip. Because the data has been latched at each pipeline stage, it suffers from less skew than would be seen in a conventional wave pipeline architecture. Furthermore, since the stages are independent of the system clock, the read data path can be run at any CAS latency as long as the re-synchronizing output is built to support it.

RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/049,487, filed Mar. 16, 2011 now U.S. Pat. No. 8,122,218, which is acontinuation of Ser. No. 12/773,531 filed May 4, 2010, now U.S. Pat. No.8,078,821, which is a continuation of Ser. No. 12/371,255 filed Feb. 13,2009, now U.S. Pat. No. 7,865,685, which is a continuation of Ser. No.11/673,834 filed Feb. 12, 2007, now U.S. Pat. No. 7,509,469, which is acontinuation of Ser. No. 10/855,968 filed May 28, 2004, now U.S. Pat.No. 7,178,001, which is a continuation of Ser. No. 10/290,317 filed Nov.8, 2002, now U.S. Pat. No. 6,772,312, which is a continuation of Ser.No. 09/129,878 filed Aug. 6, 1998, now U.S. Pat. No. 6,539,454, whichclaims priority under 35 U.S.C. §119 or 365 to Canadian Application No.2,233,789 filed Apr. 1, 1998. The entire teachings of the aboveapplications are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to semiconductor memories and, moreparticularly, to a pipelined data access in a dynamic random accessmemory.

BACKGROUND OF THE INVENTION

In conventional non-pipelined dynamic random access memories (DRAMs) adata transfer to and from the memory is performed in sequence. That is,when a read or a write command is received and an address is madeavailable, the data transfer according to either a read or write commandis performed in its entirety before another command is accepted by thememory. This results in subsequent commands being delayed by the time ittakes for the current data transfer to complete.

Historically, DRAMs have been controlled asynchronously by theprocessor. This means that the processor puts addresses on the DRAMinputs and strobes them in using the row address select signal (RAS) andcolumn address select signal (CAS) pins. The addresses are held for arequired minimum length of time. During this time, the DRAM accesses theaddressed locations in memory and after a maximum delay (access time)either writes new data from the processor into its memory or providesdata from the memory to its outputs for the processor to read.

During this time, the processor must wait for the DRAM to performvarious internal functions such as precharging of the lines, decodingthe addresses and such like. This creates a “wait state” during whichthe higher speed processor is waiting for the DRAM to respond therebyslowing down the entire system.

One solution to this problem is to make the memory circuit synchronous,that is, add input and output latches on the DRAM which can hold thedata. Input latches can store the addresses, data, and control signalson the inputs of the DRAM, freeing the processor for other tasks—After apreset number of clock cycles, the data can be available on the outputlatches of a DRAM with synchronous control for a read or be written intoits memory for a write operation.

Synchronous control means that the DRAM latches information transferredbetween the processor and itself under the control of the system clockThus, an advantage of the synchronous DRAMs is that the system clock isthe only timing edge that must be provided to the memory. This reducesor eliminates propagating multiple timing strobes around the printedcircuit board.

Alternatively, the DRAM may be made asynchronous. For example, suppose aDRAM with a 60 ns delay from row addressing to data access is being usedin a system with 10 ns clock, then the processor must apply the rowaddress and hold it active while strobing it in with the (RAS) pin. Thisis followed 30 ns later by the column address which must be held validand strobed in with the (CAS) pin. The processor must then wait for thedata to appear on the outputs 30 ns later, stabilize, and be read.

On the other hand, for a synchronous interface, the processor can lockthe row and column addresses (and control signals) into the inputlatches and do other tasks while waiting for the DRAM to perform theread operation under the control of the system clock. When the outputsof the DRAM are clocked six cycles (60 ns) later, the desired data is inthe output latches.

A synchronous DRAM architecture also makes it possible to speed up theaverage access time of the DRAM by pipelining the addresses. In thiscase, it is possible to use the input latch to store the next addresswhich the processor while the DRAM is operating on the previous address.Normally, the addresses to be accessed are known several cycles inadvance by the processor. Therefore, the processor can send the secondaddress to the input address latch of the DRAM to be available as soonas the first address has moved on to the next stage of processing in theDRAM. This eliminates the need for the processor to wait a full accesscycle before starting the next access to the DRAM.

An example of a three stage column address pipeline is shown in theschematic diagram of FIG. 1A. The column address-to-output part is athree stage pipeline. The address buffer is the first latch. The columnswitch is the second latch and the output buffer is the third latch. Thelatency inherent in the column access time is therefore divided upbetween these three stages.

The operation of pipelined read may be explained as follows: the columnaddress (1) is clocked into the address buffer on one clock cycle and isdecoded. On the second clock cycle, the column switch transfers thecorresponding data (D1) from the sense amplifier to the read bus andcolumn address (A2) is clocked into the address buffer. On clock three,the data (D1) is clocked into the output buffer, (D2) is transferred tothe read bus and A3 is clocked into the column address buffer. When D1appears at the output, D2 and D3 are in the pipeline behind it. For amore detailed discussion of the present technology, the reader isreferred to a book entitled “High Performance Memories” by Betty Prince.

The delay in the number of clock cycles between the latching CAS in aSDRAM and the availability of the data bus is the “CAS latency” of theSDRAM. If the output data is available by the second leading edge of theclock following arrival of a column address, the device is described ashaving a CAS latency of two. Similarly, if the data is available at thethird leading edge of the clock following the arrival of the first readcommand, the device is known as having a “CAS latency” of three.

Synchronous DRAMs (SDRAM) come with programmable CAS latencies. Asdescribed above, the CAS latency determines at which clock edge cycledata will be available after a read command is initiated, regardless ofthe clock rate (CLK). The programmable CAS latencies enable SDRAMs to beefficiently utilized in different memory systems having different systemclock frequencies without affecting the CAS latency.

There are other ways to divide an SDRAM data path into latency stages. Awave pipeline is shown schematically in FIG. 1B. A regular clockedpipeline has the disadvantage that the read latency will be equal to thedelay of the slowest pipeline stage (i.e. longest delay) multiplied bythe number of pipeline stages. A clocked pipeline with adjusted clocksuses clock signals that have been adjusted to each pipeline stage sothat longer pipeline stages may be accommodated without impacting theread latency. A longer pipeline stage will be ended with a clock that ismore delayed than the clock that starts the pipeline stage. A shorterpipeline stage will be started with a clock that is more delayed thanthe clock that ends the pipeline stage. A disadvantage of this scheme isthat different adjustments to the clock are needed for each CAS latencysupported by the chip. Also, architecture changes can have a largeimpact on the breakdown of the latency stages, requiring designers toreadjust all the clocks to accommodate the new division of latencystages.

Furthermore there are a limited number of places where a latency stagecan be inserted without adding extra latency or chip area. Multiplelatency stages have a disadvantage in that not all latency stages willbe equal in the time needed for signals to propagate through the stage.Another complication is the need to enable or disable latency stagesdepending on the CAS latency at which the chip has been programmed tooperate.

In the wave pipeline of FIG. 1B runs pulses of data through the entireread data path. A wave pipeline relies on an ideal data path length,that is it assumes that all data paths are equal. However, dataretrieved from certain memory cells in a memory array. will beinherently faster than data retrieval from other memory cells. This isprimarily due to the physical location of the memory cells relative toboth the read in and read out data path. Thus data must beresynchronized before being output from the chip. This data path skewmakes it difficult to safely resynchronize the retrieved data in a wavepipeline implementation.

If address signals are applied to a data path with a cycle time whichexceeds the memory access time, then the data which is read from thememory is not output during the inherent delay of the memory core. Inother words, in the wave pipeline technique address input signals areapplied with a period, which is less than the critical path of thememory core section.

Furthermore as illustrated in FIGS. 2A and 2B with a slow clock it isnecessary to store the output data of the wave pipeline until the datais needed.

SUMMARY OF THE INVENTION

The present invention thus seeks to mitigate at least some of thevarious disadvantages described with respect to the current art.

In accordance with this invention there is provided pipelined SDRAMcomprising:

(a) a memory core;

(b) a read path, defined between an address input port and an I/O dataoutput port;

(c) a plurality of pipeline stages located in said read path, eachcontrolled by a corresponding one of a plurality of asynchronous controlsignals;

(d) a timing delay element for generating said asynchronous controlsignals;

(e) latches associated with each of said plurality of pipeline stagesresponsive to said asynchronous control signal to latch data at each ofsaid stages; whereby data is latched at every pipeline stage independentof said system clock.

In accordance with a further aspect of this invention the asynchronouscontrol signals are generated within the chip and optimized to thedifferent latency stages.

A still further aspect of the invention provides stages that areindependent of the system clock thereby allowing the read data path tobe run at any CAS latency which may be supported by a suitableresynchronizing output.

A still further aspect of the invention provides for a synchronizationcircuit coupled to the end of the read data path for synchronizing theoutput data to a system clock.

BRIEF DESCRIPTION OF THE DRAWINGS

A better understanding of the invention will be obtained by reference tothe detailed description below in conjunction with the followingdrawings in which:

FIG. 1A is a schematic diagram of a conventional clocked pipeline memorycircuit;

FIG. 1B is a schematic diagram of a conventional wave pipeline memorycircuit;

FIGS. 2A and 2B are timing waveforms for a SDRAM having a CAS latency of3 running under fast and slow clock conditions respectively;

FIG. 3 is a schematic diagram of a generalized embodiment of the presentinvention;

FIG. 4 is a more detailed schematic diagram of the generalizedembodiment of FIG. 3;

FIG. 5 is a timing waveform diagram according to a first embodiment ofthe present invention;

FIGS. 6A (comprising FIGS. 6A′ and 6K), 6B and 6C show detailed circuitdiagrams of a pipe control circuit according to an embodiment of thepresent invention;

FIGS. 7A, 7B and 7C show detailed circuit diagrams for a pipe latch anddata output latch according to an embodiment of the present invention;and

FIG. 8 is a schematic diagram of a data output control circuit accordingto an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following discussion, like numerals refer to like elements in thefigures and signals asserted low are indicated interchangeably with an xor an overscore associated with the corresponding signal name. Referringnow to FIG. 3, a schematic diagram of a pipelined semiconductor memoryaccording to a generalized embodiment of the invention is showngenerally by numeral 20. The memory includes a core memory array 22having a read path 24, defined between an address input port 25 and adata output 32. The read path 24 is broken up into latency stages 27,each of which is latched by respective asynchronous control signals 28.A synchronizing circuit 30 is coupled to the last latency stage of theread path in order to resynchronize the data to the system clock CLK atoutput 32 of the read path. The data is synchronized to the system clockCLK a predetermined number of clock cycles after the application of anaddress signal A to the address input 25, i.e. depending on the CASlatency of the system. The segmentation of the read path 23 into thethree main latency stages, each controlled by respective control signals28 illustrates, in general, the combining of clocked and wave pipelinetechniques to achieve an asynchronous pipeline implementation accordingto the invention which exhibits less skew than a conventional wavepipeline but which allows for operation with any CAS latency withouthaving to adjust individual clocks in each stage as would be required ina clocked pipeline implementation. The description with respect to FIG.3 serves to provide an overview of the detailed circuits discussedbelow.

Thus, referring to FIG. 4 a detailed schematic diagram of thegeneralized embodiment of FIG. 3 is shown by numeral 40. The latencystages 26 in FIG. 3 include an address input latch 42, for receiving anaddress signal Ai at the address input port 25, the output of which iscoupled to an address pre-decoder latch 44 which is in turn connected toa column address decoder latch 46. The column address decoder latch 46decodes the address signal and is coupled to select memory cells 48 inthe memory cell array 22. The column address decoder 46 activatesrelevant sense amplifiers (not shown) for detecting the data read outfrom a selected memory cell 48. The output of the sense amplifiers iscoupled to a read main amplifier block 50 via a local databus DB, whichis 32-bits wide in this embodiment, The output of the read mainamplifier 50 is coupled to a global databus GDB. A multiplexer 52multiplexes the GDB onto an I/O databus IODB, which is in turn coupledto a read databus amplifier RDBAMP latch block 54.

The synchronizing circuit 30 of FIG. 3 is comprised of pipe latches 56,an output buffer 58 and control circuitry shown by block 61. Morespecifically, the output from the RDBAMP latch is selectively coupled tothe input of three pipe latches pipe_latch0, pipe_latch1 and pipe_latch2as will be described below. The outputs from the pipe latches areconnected together and coupled to the input of the output buffer 58.

The memory also includes a command latch circuit 62 having a clock inputterminal coupled to the system clock CLK and a command input terminalfor receiving command signals such as RAS, CAS, CS. The command latch 62provides a first control signal 64, which is run through a series ofcontrol logic and delay elements T1 to T4. Each of the delay elementsT1, T2, T3 and T4 produce respective delayed control signals that arefed to an input latch terminal of the pre-decoder latch 44, the Ydecoder 46, the RMA 50 and the RDBAMP latch 54, respectively. Thesesignals serve as individual asynchronous control signals for thesecircuits. On the other hand, the address latch clock input is deriveddirectly from the system clock signal CLK.

Control of the pipe latches pipe_latch0, pipe_latch1 and pipe_latch2 isprovided by the pipe latch control circuitry 61. Each pipe latch isdriven by a respective pipe latch enable signal, latch_enx(0),latch_enx(1) and latch_enx(2) coupled to its latch input enableterminal. The pipe latch enable signals are derived from a pipe counter64 which produces three count signals COUNT. The pipe counter is a freerunning counter which resets its count based on the total number of pipelatches. After a preset number of clock counts set by the system clocksignal coupled to the pipe counter clock input terminal. The outputCOUNT signals from the pipe counter are coupled via count delay elements66 to count synchronization latches 68. The outputs from the threelatches 68 provide the pipe latch enable signal for clocking theappropriate pipe latch 56. The clock input enable terminal of the lathes68 are coupled to the asynchronous control signal of the latency stagein the read path, in this case, signal IODB_READX of the RDBAMP 54 toensure the pipe latch is latched at the appropriate time.

Alternatively, a more accurate synchronization of the data IODB_READXand the CNT_DEL signals in latch 68 can be achieved as follows:

The count delay circuitry 66 could be segmented into multiple delaystages, each receiving control logic enable signals such as YSG orY_EXTRD. The timing relationship between the address propagation anddata retrieval and the clock count delay would therefore be more closelymatched.

Additionally, the output COUNT of pipe counter 64 is connected to a pipedelay element 70 for generating a pipe latch output enable signalQEN_RISEX which is connected to the respective output enable terminal ofthe pipe latches 56. A CLK_IO signal which is DLL generated and slightlyleads the system clock CLK, is coupled to an output enable terminal ofthe pipe delay and the output buffer 58. The DLL (delay locked loop)ensures that CLK_IO will enable the output buffer to properlysynchronize data with the system clock edge.

The operation of the circuit will be explained as follows with referenceto the timing diagram shown in FIG. 5. At time t0 of the system clocksignal CLK the address latch 42 latches the external address signal Ai,which is then free to propagate to pre-decoder latch 44 which latchesthe address after a delay T1 set by the delay element T1. These addresssignals are decoded in the Y decoder 46 and latched by the signal YSGdelayed from CLK by T1 and T2. At this time the appropriate columns areactivated and data is read out from the memory cells into column senseamplifiers and then latched in the RMA 50 by the IOREAD signal which isdelayed from CLK by T1+T2+T3. Shortly thereafter, the data is availableon the global data bus GDB. The RDBAMP 54 may now be latched at time t1by signal IODB_READ that is delayed from IOREAD by T4, to provide theDOUTE signal.

In general as described above, these asynchronous control signals areused to control the pipeline stages. These signals control when data isread into the latch (usually a latched amplifier). Once read into thelatch, data is free to propagate toward the next stage Each controlsignal is generated by delaying the control signal from the previouslatency stage. The first stage is started by the external clock CLK. Thenext stage will latch data from the previous stage on the control signalthat is delayed from the external clock. It may be noted that some ofthese delays are inherent in the circuits used to control whether a readis to take place, while some of the delays are deliberately added usingtiming delay elements. These are usually comprised of buffers sized torun slowly and which may include additional resistive or capacitiveelements.

Thus the delays T1 to T4 can be optimized to the particular memoryindependent of the external clock timing. The delay for each of theselatches is selected to accommodate the propagation delays between theseblocks. Thus the clock signal applied to the read main amplifier latchis synchronized and delayed from the clock signal applied to the columndecoder latch to accommodate the lag in retrieving data from differentareas of the memory array 22 to the read main amplifier 50.

The data once latched in the RDBAMP 54 at time t1, must as with theconventional wave pipelines, be resynchronized to the system clock CLKat the output 32 of the memory. This is accomplished as follows. Thepipe latches 56 allow data to be stored in the event of fast data or aslow clock. Generally, the number of latches needed is equivalent to thenumber of latency stages to be supported. Each time a read is performed,a COUNT signal, one of these is shown in FIG. 5, is delayedasynchronously by the count delay element 66 and clocked by the controlsignal for the last stage in this case IODB_READ into a clocksynchronizing latch 68. This time delayed COUNT signal generatesLATCH_EN which determines which of the latches 56 the data from RDBAMP54 is to be stored in. Furthermore the COUNT signal is also delayed bythe appropriate number of clock cycles, as determined by the current CASlatency to which the chip is programmed. This clock delayed COUNT signalshown as QEN_RISE in FIG. 5 controls which of the latches 56 has itsoutput enabled to output data to the output buffer 58. Once COUNT hasbeen set, after the delay through count delay circuitry 66, a CNT_DELsignal is generated which is combined in the clock synchronizing latch68 with the IODB_READX signal to generate the LATCH_ENX signal. Afterthe predetermined clock delay in the pipe delay circuit to QEN_RISEX isasserted allowing output form the latch containing the data for theappropriate clock cycle. The latches 56 work as a FIFO register, withthe first data input to one of the set of latches 56, being the firstdata to be output from the set of latches.

Thus from the above description it may be seen that the latches in theread path, segment the path into latency stages of an asynchronouspipeline. The chip architecture and the maximum operating frequencydetermine the number and placement of these stages. In general, a higheroperating frequency will require a large number of shorter pipelinestages. Other techniques can be used such as doubling the number of datapaths in a stage and alternating between the data paths. For example, aread output from the sense amplifiers is alternated between two databuses. This is described in Mosaid U.S. Pat. No. 5,416,743. Theplacement of the stages will generally be dictated by the position ofamplifiers or buffers, which may be converted into latches withoutresulting in extensive area penalty. For clarity, in the previous andfollowing discussion latency stages refer to any circuit element capableof introducing a delay in the signal or data path.

Turning now to FIGS. 6 to 8, a detailed implementation of thegeneralized embodiment of FIG. 4 is shown. Accordingly, referring toFIG. 6A, the pipe control circuitry 61 includes a pipe counter 90, adetailed schematic of which is shown in FIG. 6B, for producing a twodigit binary count, COUNT 0 and COUNT 1, determined by the input systemclock frequency at its clock input terminal CLK. Each of the countlines, COUNT 1 and COUNT 0 are connected to respective count delayelements 92 and 94. The delayed count signals are connected to a countdecoder 96 which decodes the input binary count to activate one of thethree count delay lines 98, CNT0_DEL, CNT1_DEL, CNT2_DEL. The signals onthese delayed count lines 98 correspond to the COUNT signal as shown inFIG. 5. In FIG. 5, all elements were shown with only one of the threecomponents for simplicity with the exception of the three pipe latches.The delayed COUNT signals 98 are coupled to the inputs of respectiveclocked latches 100, the outputs of which are buffered and provide therespective latch enable signal referred to in FIG. 5, LATCH_ENX(0),LATCH_ENX(1), LATCH_EN(2). The clock input terminal of these latches 100is coupled to the IODB_READ asynchronous control signal from the lastlatency stage via an inverter. The pipe counter 90 also has its outputconnected to a second decoder 102 also providing respective countsignals, CNT 0, CNT 1 and CNT 2, which are coupled to respective pipedelay elements 104, 106 and 108. A detailed circuit diagram of the pipedelay circuit implementation is shown in FIG. 6C. The output of the pipedelay is controlled by a CLK_IO signal and generates the QEN_RISE signalreferred to in FIG. 5 connected to the output latch enable of the pipelatches 56. Corresponding QEN_FALL signals are generated for the fallingedge of the system clock whereas QEN_RISE corresponds to the rising edgeof the system clock.

Referring to FIGS. 7A and 7B, a detailed schematic of the pipe latches56 and the output buffer circuitry is shown As may be seen in FIG. 7A,the data bits from the IODB databus are received at the input of the RDBamplifiers 110. Two RDBAMPS are shown in this implementation because ofthe double data rate (DDR) where data is clocked on both the rise andfall edges of the system clock. The outputs from the RDBAMPS areconnected to a series of six pipe latches 112 to 122. Six latches arerequired instead of three due to the DDR implementation. The enableinputs of the pipe latches 112 to 122 are coupled to the respectivelatch enable signals derived from the circuit of FIG. 6A. The top threepipe latches 112 to 116 have their outputs connected to inputs of a 3 OR2 NAND gate 124. Similarly, the bottom three latches 118 to 122 have theoutputs connected to a 3 OR 2 NAND gates 126. The QEN_RISE signal isconnected to the inputs of the 3 OR 2 NAND gate 124, the output ofwhich, when enabled, couples data to the DOUT_RISE, DOUT_RISEX input ofthe output buffer shown in FIG. 7B. As may also be seen in FIG. 7A, asystem clock control signal EDGE is provided for directing data to thetop three or bottom three latches, once again a DDR feature. Also, for afast system clock relative to the speed of the data path the 3 OR 2 NANDgates 124 or 126 will be already on thus allowing data to pass throughto the output buffer from the pipe latches. In the alternative, with aslow clock, the system receives the data and waits for the clock, thusutilizing the 3 OR 2 NAND gates 124 or 126. Turning back to FIG. 7B, thedata output buffer 58 as shown in FIG. 4 is comprised of data outputlatches 130 to 136. The input enable terminals of the data outputlatches 130 to 136 are coupled to the CLK_IO signal for synchronizing tothe correct system clock edge. A detailed circuit implementation of thepipe latches 112 to 122 is shown in FIG. 7C.

Thus, it may be seen that the present invention provides a flexiblemethod for implementing a pipelined semiconductor memory, which caneasily accommodate both a fast and slow system clock. Furthermore, theflexible design allows further segmentation of the read path for moreprecise matching of internal signals. Furthermore, various CAS latenciesmay be accommodated by simply delaying the output from the pipe delayelement 70 to wait a specific number of clock cycles before clocking thedata out.

Although the invention has been described with reference to certainspecific embodiments, various modifications thereof will be apparent tothose skilled in the art without departing from the spirit and scope ofthe invention as outlined in the claims appended hereto.

What is claimed is:
 1. A semiconductor memory device comprising: amemory core having addressable memory elements; a plurality of pipelinestages, each pipeline stage having a latency; a plurality of controllogic and delay elements, each control logic and delay element delayinga control signal by a delay corresponding to the latency of a respectiveone of the plurality of pipeline stages to produce a correspondingpipeline control signal, each pipeline stage being latched by thepipeline control signal corresponding to the previous pipeline stage;and a synchronizer responsive to a clock signal received from a delaylocked loop (DLL), the synchronizer being configured to output read dataas synchronized data through an output buffer.
 2. The semiconductormemory device of claim 1, further comprising: a signal provider forproviding a latch control signal in response to the clock signal and aread signal.
 3. The semiconductor memory device of claim 2, wherein thesignal provider comprises: an enable signal provider for providing firstand second enable signals as the latch control signal in response to theclock signal.
 4. The semiconductor memory device of claim 3, furthercomprising: a data latch configured to: input the directed datathereinto in response to the first enable signal, and output the latcheddata as the synchronized data in response to the second enable signal.5. The semiconductor memory device of claims 4, wherein the signalprovider further comprises: a counter for counting the clocks of theclock signal; and delay circuitry for delaying a count output from thecounter to provide the first and second enable signals.
 6. Thesemiconductor memory device of claim 3, wherein the latch circuitrycomprises: a plurality of data latches coupled in parallel, the datalatches being configured to input the directed data thereinto inresponse to the first enable signal, and output the latched data as thesynchronized data in response to the second enable signal.
 7. Thesemiconductor memory device of claim 6, wherein the signal providerfurther comprises: a counter for counting the cycles of the clocksignal; and delay circuitry for delaying a count output from the counterto provide the first and second enable signals.
 8. The semiconductormemory device of claim 7, wherein the signal provider further comprises:a latch for providing the first enable signal in response to the delayedsignal from the delay circuitry and a delayed signal derived from amemory control signal.
 9. The semiconductor memory device of claim 1,wherein the synchronizer comprises: data output circuitry configured toreceive the output data from the data latch and output the received datato the data output port as the synchronized data.
 10. The semiconductormemory device of claim 9, wherein the data output circuitry is furtherconfigured to synchronize data output in response to a delayed clocksignal provided by the delay locked loop.
 11. The semiconductor memorydevice of claim 9, wherein the data output circuitry is furtherconfigured to synchronize data output in response to edges of the delayclock signal.
 12. The semiconductor memory device of claim 9, whereinthe data output circuitry is further configured to synchronize dataoutput in response to either rising edges or falling edges of the delayclock signal.
 13. The semiconductor memory device of claim 9, whereinthe data output circuitry is further configured to synchronize outputdata in response to rising edges and falling edges of the delay clocksignal.
 14. The semiconductor memory device of claim 1, furthercomprising a timing delay element configured to define the latency. 15.The semiconductor memory device of claim 1, wherein the memory corecomprises a dynamic random access memory.
 16. The semiconductor memorydevice of claim 1, further comprising latch circuitry for receiving theread data and outputting the read data to the synchronizer as latcheddata.
 17. The semiconductor memory device of claim 16, wherein the latchcircuitry comprises a register.
 18. The semiconductor memory device ofclaim 17, wherein the register is a FIFO register.
 19. The semiconductormemory device of claim 1, wherein the synchronizer further compriseslatch circuitry for receiving parallel read data from the memory coreand outputting serialized read data through the output buffer.
 20. Thesemiconductor memory device of claim 19, wherein the synchronizerfurther comprises: first circuitry to output data in response to arising edge of the clock signal received from the DLL, and secondcircuitry to output data in response to a falling edge of the clocksignal received from the DLL.
 21. The semiconductor memory device ofclaim 19, wherein the synchronizer further comprises: first circuitry toreceive a clock signal from the DLL and a complementary clock signal ofthe DLL; second circuitry to output data in response to a rising edge ofthe clock signal received from the DLL, and second circuitry to outputdata in response to a rising edge of the complementary clock signalreceived from the DLL.
 22. A double data rate (DDR) synchronous dynamicrandom access memory (SDRAM) comprising: a memory core havingaddressable memory elements; a first path, defined between an addressinput port and a data output port, the memory core being included in thefirst path, the first path including a plurality of pipeline stages,each of the plurality of pipeline stages including a latch responsive toa corresponding control signal; a plurality of delay elements associatedwith the plurality of pipeline stages, each of the plurality of delayelements being configured to provide the corresponding control signal,the corresponding control signal being provided in response to a delayedversion of a system clock signal and a command signal; and a delaylocked loop (DLL) circuit having an output for providing a DLL clocksignal to a data output buffer, the data output buffer being configuredto output data in response to the DLL clock signal.
 23. The SDRAM ofclaim 22, wherein one of the plurality of the asynchronous controlsignals is a gated version of the system clock signal.
 24. The SDRAM ofclaim 23, wherein one of the plurality of delay elements is configuredto gate the delayed version of the system clock as the asynchronouscontrol signal provided from a previous one of the plurality of delayelements.
 25. A pipelined double data rate synchronous dynamic randomaccess memory (SDRAM) comprising: a memory core having addressablememory elements; a first path, defined between an address input port anda data output port, the first path comprising a data output buffer, thememory core being included in the first path, the first path including aplurality of pipeline stages, each of the plurality of pipeline stagesincluding a latch responsive to a corresponding control signal; aplurality of delay elements associated with the plurality of pipelinestages, each of the plurality of delay elements being configured toprovide the corresponding control signal, the corresponding controlsignal being provided in response to a delayed version of a system clocksignal and a command signal; and a delay locked loop (DLL) circuithaving an output for providing a DLL clock signal to a data outputbuffer, the data output buffer being configured to output data inresponse to the DLL clock signal.
 26. A pipelined double data ratesynchronous dynamic random access memory (SDRAM) comprising: a memorycore having addressable memory elements; a first path, defined betweenan address input port and a data output port, the first path comprisingat least one data output buffer, the memory core being included in thefirst path, the first path including a plurality of pipeline stages,each of the plurality of pipeline stages including a latch responsive toa corresponding control signal; a plurality of delay elements associatedwith the plurality of pipeline stages, each of the plurality of delayelements being configured to provide the corresponding control signal,the corresponding control signal being provided in response to a delayedversion of a system clock signal; and a delay locked loop (DLL) circuithaving an output for providing a DLL clock signal to a data outputbuffer, the data output buffer being configured to output data inresponse to the DLL clock signal.